Sort by
Refine Your Search
-
Listed
-
Category
-
Country
-
Program
-
Employer
- Chalmers University of Technology
- NOVA School of Science and Technology | FCT NOVA
- University College Cork
- AALTO UNIVERSITY
- Aston University
- CNRS
- CUNY City College of New York
- California State University, Northridge
- Commissariat à l'Energie Atomique et aux Energies Alternatives - Groupe
- ENSICAEN
- ETH Zürich
- Eindhoven University of Technology (TU/e)
- European Synchrotron Radiation Facility
- Free University of Berlin
- Grenoble INP - Institute of Engineering
- Heriot Watt University
- KU LEUVEN
- Kaunas University of Technology
- Leibniz Universität Hannover
- Michigan State University
- Nanyang Technological University
- New York University
- Politecnico di Milano
- The California State University
- University of Manchester
- University of Oklahoma
- Université de Lille
- Virginia Community College
- 18 more »
- « less
-
Field
-
, microsystems for injecting drugs) or transport (Lidar for aeronautics and trains). Context and motivation As a result of the reduction in the size of CMOS transistors, low-frequency noise (LFN) due to charge
-
School graduates over a thousand students who are ready to take on great ambitions and challenges. For more details, please view: https://www.ntu.edu.sg/eee At E2ESR Lab www.wrzhanglab.com , we focus
-
et la mobilité des trous) comme des performances de dispositif (tension de seuil de transistor, stabilité du courant dans le temps et dans des conditions environnementales diverses) pour démontrer
-
advanced power semiconductor devices such as wide-bandgap transistors and diodes; novel converter topologies; intelligent control; and integration of AI into secure power management systems. Micro/Nano
-
project to produce a commercially viable outcome. To assimilate knowledge of high-speed, low-loss Gallium Nitride transistor technology and/or novel, multilevel converter circuits. Personal attributes
-
responsible for designing, building, and utilizing single-walled carbon nanotube field effect transistor (SWNT FET) sensors to probe biological phenomena at the single-molecule level. See Turvey et al. (2022
-
researched by well-optimized experiments and be assessed on various RF devices, such as GaN transistors. The candidate: should have a MSc degree in Electrical Engineering or equivalent; should be ranked within
-
to the determination of crystal and magnetic structures in condensed matter systems. You will be enrolled at the Technical University of Denmark, where you will spend 6 months. The current slowdown in transistor density
-
at developing new stacks of epitaxial layers containing Gallium Nitride (GaN) on Silicon substrate to demonstrate a power transistor capable of withstanding voltages higher than 1200 V. In particular, the project
-
laboratory. Transmission electron microscopy will be used for a structural, chemical, and electronic study of high electron mobility transistors (HEMTs) based on Niobium nitride (NbN) as part of this contract