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. This problem becomes even more pressing for simultaneous multi-qubit operations. The goal of this project is to develop software tools for the automated tuning of high-fidelity readout and gates in silicon spin
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NIST only participates in the February and August reviews. While natural and anthropogenic contaminants threaten existing freshwater supplies, the use of alternative, “dirty” sources is increasing
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structure-mechanical property relationships are needed to enable diverse applications of these materials. There is a need for quantitative measurement methods to study the interfacial properties of the filler
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performance modeling capabilities that simultaneously consider multiple performance aspects, robust IAQ and other performance metrics, and measurement methods, sensors, and data to evaluate and verify building
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@nist.gov 303.497.5252 Description New energy technologies demand improved knowledge of the thermal transport properties of fluid mixtures, often including water as a component. It is well established
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properties in semiconductor device materials. This research is expected to be executed through internal and external collaborations with comprehensive expertise in advanced material simulation, high throughput
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designs. In addition to fabrication and characterization of these measurement tools, we also develop new readout schemes, signal and data processing, control systems, and biomimetic surfaces to improve
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and Faller. A pair of field masses translate adjacent to a pendulum bob, thereby displacing the bob in accord with the change in the gravitational field. The displacement is read-out using Fabry-Perot
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variables. Computer-controlled equipment is available for alternating-current magnetic-susceptibility measurements as a function of frequency, temperature, and magnetic field. An automated vibrating sample
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. This postdoctoral position focuses on developing high-fidelity Finite Element Method (FEM) simulations to characterize mechanical properties and deformation behavior in advanced packaging applications. It involves