412 application-forms "https:" "https:" "https:" "Stanford University" positions at NIST
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measurements by NMR spectroscopy. We are also interested in the application of NMR spectroscopy to VLE measurements on important mixtures, such as commercially relevant refrigerant mixtures (e.g., replacements
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Sorbent materials are candidates for many industrial and sustainable development applications, including carbon capture, hydrogen and methane storage, gas separation and purification, and catalysis. However
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5597 Description Measurements of radioactive gases are critical in environmental monitoring, nonproliferation testing, and medical applications. NIST has been asked by multiple stakeholders to provide
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the measurement of infrared radiation for applications to remote sensing, fundamental metrology, process monitoring, homeland security, defense, and biomedical areas. Specific interests include (1) the development
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Description Developing next-generation joint communcations and sensing applications requires precise measurements of the radio frequency propagation environment as well as sensing target characterization
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trapping schemes for position retention and confers different scientific and technological application spaces which have yet to be sufficiently explored or exploited – those in which the color center may
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@nist.gov 301.975.4127 Description This research is centered on the development and application of analytical methods to the characterization of nanomaterials. Opportunities exist to study the composition
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and ultimately transportable. Precision spectroscopy experiments in our labs have applications to clocks, inertial sensors, and tests of relativity and fundamental interactions. Two main project areas
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characterize and accurately quantify trace elements, isotopes and organic chemical markers in complex sample matrices. Such holistic chemical measurement systems are needed for a variety of areas including
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levels are defining electronic properties that govern how an electronic device operates, and these properties are dependent on many factors such as heterointerfaces formed and its microstructure. In