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PhD Development of new epitaxial buffer layer schemes for avalanche-capable GaN on Silicon power switching transistors M/F

CNRS | La Valbonne, Rhone Alpes | France | about 2 months ago

at low cost. Whether for consumer applications below 220 V, or for electric or hybrid vehicles between 600 and 1200V, the epitaxial deposition of semiconductors such as GaN on large diameter substrates is