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. Extension may be possible contingent upon future funding. Previous hands-on experience with semiconductor device fabrication is required. Experience working with high resolution e-beam lithography, optical
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learning simulations - Growth of metallic heterostructures by sputtering / ALD - Optical and e-beam lithography - Ion beam and reactive etching - Fabrication of skyrmion based nano-devices - Electrical
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of Research ExperienceNone Research FieldTechnologyYears of Research ExperienceNone Additional Information Eligibility criteria - Lithography techniques in clean room - Magnetism and magnetic sensors
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nanofabrication using optical and electron-beam lithography is highly desirable. The successful candidate should demonstrate the ability to develop independent research strategies while working effectively within a
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fabricate nanoscale electrical test structures (e.g., photolithography, e-beam lithography) Design, test, and characterize radiofrequency (RF) circuitry and measurement approaches Analyze and interpret data
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, Electrical Engineering, Applied Physics, or related field Hands-on cleanroom experience (stepper, e-beam lithography, dry/wet etching, thin-film deposition, bonding, micro-transfer printing) Experience with
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demonstrated skills in the following areas: (i) Fabrication of 2D materials based nanodevices using exfoliation, transfer, optical and electrical beam lithography (EBL). Strong command of EBL is required. (ii
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lithography, dry/wet etching, and metallization Collaborate within a multidisciplinary team across CNM, MSD, APS, Q-NEXT to characterize device performance across structural, optical, electro-optic, and
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, and Experience Experience with x-ray techniques and/or synchrotron experiments. Experience with nanofabrication tools (particularly focused ion beam and lithography). Background in condensed matter
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-beam lithography, UHV thin-film deposition, dry/wet etching, materials and surface metrologies) Experience operating dilution refrigerators Expertise in superconducting microwave circuit design and