5 web-programmer-developer-"https:"-"https:" Postdoctoral positions at University of Bristol
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including finite element simulations. You will have the opportunity to develop and test models for unique device structures including graded channel/multi-channel GaN RF HEMTs, as well as state-of-the-art GaN
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strategic national centre aimed at transforming next generation wide and ultrawide bandgap semiconductor power electronics, and partners numerous European Space Agency (ESA) and DARPA programmes on high
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programme grant ULTRAlGaN and the Innovation and Knowledge Centre REWIRE , focusing on GaN, Ga2O3, SiC and diamond power materials and devices, from their fundamental understanding and development
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device technology. The CDTR leads numerous UK and international strategic programmes on power and RF electronics, including the European Innovation Accelerator, part of Horizon Europe, programme CoolbrAIn
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the field in MOCVD growth of Gallium Oxide and related alloys, with application in next generation high voltage devices. This role focuses on developing new materials and material structures high voltage