5 power-system-"https:"-"https:"-"https:" Postdoctoral positions at University of Bristol
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-channel GaN RF HEMTs, as well as state-of-the-art GaN power devices. You will have access to an extensive electrical device testing suite available in Bristol, and will be supported by our 35-member
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and Ga2O3 power devices, and collaborate with our industrial partners spanning the semiconductor supply chain. In addition, you will collaborate with other team researchers that implement device
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interest, for example, is the recycling of heat waste energy generated by the electronic chip, however you will also assess overall heat transport within the chips, their packaging and systems. You will use
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electronics using MOCVD. This research position will give you the opportunity to make a major impact on future power device technology. This is a two-year position, initially. The CDTR is a vertically
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electrical characterization of wide and ultra-wide bandgap semiconductor materials and devices, including GaN, Gallium Oxide, SiC and diamond (key enabling materials for power and RF electronics) and/or