5 design-"https:"-"https:"-"https:"-"Institut-Agro-Rennes-Angers" Postdoctoral positions at University of Bristol
Sort by
Refine Your Search
-
prior expertise in TCAD device simulations. This role encompasses TCAD device design of wide and ultra-wide bandgap semiconductor materials and devices, including GaN and Ga2O3, also thermal simulations
-
device structures will be designed and studied. Expertise in optical laser-based systems and thermal / thermomechanical simulations are of benefit for this position. You will have the opportunity to study
-
analysis of devices to link to your electrical reliability studies, and have access to simulation tools (Silvaco Victory/ATLAS, ANSYS). The CDTR leads the £11M UKRI Innovation and Knowledge Centre REWIRE , a
-
programme grant ULTRAlGaN and the Innovation and Knowledge Centre REWIRE , focusing on GaN, Ga2O3, SiC and diamond power materials and devices, from their fundamental understanding and development
-
integrated research group, from semiconductor growth, materials analysis, device design, device fabrication and testing (electrical, reliability, thermal management) to packaging. A recent focus of our MOCVD