1 molecular-beam-epitaxy Postdoctoral positions at ENSICAEN

Post-Doctorant - Structural, chemical and electronic study at the sub-Angstrom scale of nitrogen polarity NbN based transistors (H/F)

ENSICAEN | Caen, Basse Normandie | France | about 2 months ago

. Project N POLAR: context and objectives The N POLAR project aims at developing nitrogen-polarity III nitrides on silicon substrates by molecular beam epitaxy. The N-polarity III nitrides will be obtained by