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Post-Doctorant - Structural, chemical and electronic study at the sub-Angstrom scale of nitrogen polarity NbN based transistors (H/F)

ENSICAEN | Caen, Basse Normandie | France | about 2 months ago

POLAR project is to obtain planar III-N heterostructures with high structural quality and low impurity concentration, deposited on silicon substrates to develop HEMT devices for high frequency

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