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of dislocation stress fields (in collaboration with CEA Saclay). - Program the diffraction procedures to generate images comparable to Electron Channeling Contrast Imaging (ECCI) obtained using a Scanning Electron
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Postdoctoral researcher (M/F), synthesis of crystal phase heterostructures by Molecular Beam Epitaxy
outcomes. Molecular beam epitaxy (MBE) growth of GaAs nanowires on patterned Si/SiO₂ substrates. Structural analysis by electron microscopy (in situ TEM, electron diffraction, zone-axis indexing). Automated
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plasma-assisted CVD techniques; - Knowledge of characterization techniques: Raman spectroscopy, scanning electron microscopy, atomic force microscopy, X-ray diffraction, etc.; - Knowledge of vacuum
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, including X-Ray diffraction, scanning electron microscope, atomic force microscopy Additional comments NA Website for additional job details https://emploi.cnrs.fr/Offres/CDD/UMR137-JULGRO0-024/Default.aspx
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and processes science and engineering, it covers: materials, metallurgy, plasmas, surfaces, nanomaterials and electronics. By 2025, IJL has 259 permanent staff (34 researchers, 133 teacher-researchers
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synthesised in situ using a state-of-the-art pulsed laser deposition system. Key characterisations include X-ray diffraction for structural properties and temperature-dependent magneto-optical properties