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PhD Development of new epitaxial buffer layer schemes for avalanche-capable GaN on Silicon power switching transistors M/F

CNRS | La Valbonne, Rhone Alpes | France | about 2 months ago

at developing new stacks of epitaxial layers containing Gallium Nitride (GaN) on Silicon substrate to demonstrate a power transistor capable of withstanding voltages higher than 1200 V. In particular, the project