2 first-principle "https:" PhD positions at CNRS

PhD Development of new epitaxial buffer layer schemes for avalanche-capable GaN on Silicon power switching transistors M/F

CNRS | La Valbonne, Rhone Alpes | France | about 2 months ago

aims to remove the limitations related to the breakdown that usually requires the use of very thick GaN films. These ideas were the subject of a first proof of principle at lower voltage (500 V) with

24 PhD positions in Battery Research and Energy Storage M/F – DESTINY2 MSCA COFUND

CNRS | France | 2 months ago

6 Jan 2026 Job Information Organisation/Company CNRS Department ALISTORE-ERI Research Field Chemistry Physics Technology Researcher Profile First Stage Researcher (R1) Country France Application