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, elemental, and electrical characterization of the fabricated thin films will be carried out with a view to their optimization. By taking advantage of the combination of different materials, the aim is to
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processes at the channel/HfO2 interface using first-principles techniques, with a view to optimizing devices for neuromorphic computing. Applicable legislation and regulations: Research Fellow Statute (EBI
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or Sc-doped VO2 layer and optimization of the deposition conditions, in order to try to increase the semiconductor-metal transition temperature, relative to the case of undoped VO2 (~68 ºC). 2. Design
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