1 power-system-"https:"-"https:"-"https:"-"Mines-Paris-PSL" PhD positions in Slovakia

PhD position on Vertical GaN MOS structures with semi-insulating channel for high-power switches

Institute of Electrical Engineering, Slovak Academy of Sciences | Slovakia | about 5 hours ago

. The combination of GaN’s wide bandgap, high electron mobility, and semi-insulating properties results in improved performance, making vertical GaN devices an ideal choice for next-generation power systems. In