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knowledge in General and Inorganic Chemistry along with an experience in the preparation/characterization of advanced inorganic materials and advanced oxidation processes (AOPs). The PhD. candidate must have
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bandgap (Eg) semiconductor materials. Gallium oxide (Ga2O3) is a good example of such material – with Eg ~4.9 eV and high critical field which surpasses those of the mainstream semiconductors for power
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, including thermal stress, gate oxide breakdown, and defect-related degradation will be also analysed. Please submit applications to elusav@savba.sk . For further information about the scientific content
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2026 Is the job funded through the EU Research Framework Programme? Not funded by a EU programme Is the Job related to staff position within a Research Infrastructure? No Offer Description Gallium oxide
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2026 Is the job funded through the EU Research Framework Programme? Not funded by a EU programme Is the Job related to staff position within a Research Infrastructure? No Offer Description Gallium oxide
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, high-temperature strength in the range of 1500°C to 2000°C, and dynamic oxidation in an oxyacetylene torch at temperatures above 1700°C on such prepared materials will be characterized. Supervisor: Dr. Ondrej Hanzel