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- Institute of Electrical Engineering, Slovak Academy of Sciences
- Institute of Physics Slovak Academy of Sciences
- Slovak University of Agriculture in Nitra
- Institute of Geography, Slovak Academy of Sciences
- Matej Bel University in Banská Bystica, Faculty of Economics
- Matej Bel University in Banská Bystrica, Faculty of Economics
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public university that provides high quality university and further education and performs excellent research in a number of research areas. The university is the first Slovak institution, to be a holder
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public university that provides high quality university and further education and performs excellent research in a number of research areas. The university is the first Slovak institution, to be a holder
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Framework Programme? Not funded by a EU programme Is the Job related to staff position within a Research Infrastructure? No Offer Description Effect of hydrogen on deformation behavior and fracture of high
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. The combination of GaN’s wide bandgap, high electron mobility, and semi-insulating properties results in improved performance, making vertical GaN devices an ideal choice for next-generation power systems. In
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semiconductors such as GaN and SiC and to enable reliable operation at voltages >6 kV, where suitable alternative is currently unavailable. Such devices are expected to find applications in high-efficiency power
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(Ga2O3) is an emerging ultrawide bandgap (UWBG, Eg=4.8–5.3 eV) semiconductor material, recently recognized as a highly promising for high-voltage and high-power applications. This material can enable solid
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the transition from long, complex, internationally dispersed supply networks to more regionally embedded structures influences the performance, stability and strategic orientation of agri food systems
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dynamically developed material in semiconductor industry marked by a Nobel Prize for invention of blue/white LEDs. III-N materials are currently attracting a lot of interest also for applications in power, high
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bandgap (Eg) semiconductor materials. Gallium oxide (Ga2O3) is a good example of such material – with Eg ~4.9 eV and high critical field which surpasses those of the mainstream semiconductors for power
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The AGATA (Advanced GAmma Tracking Array) is one of the most advanced gamma-ray tracking spectrometers currently in operation worldwide. Based on highly segmented HPGe detectors, pulse-shape analysis, and