2 transistor-"https:" Postdoctoral positions in France

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Researcher in electronic device physics - CROMA

Grenoble INP - Institute of Engineering | Grenoble, Rhone Alpes | France | 4 days ago

, microsystems for injecting drugs) or transport (Lidar for aeronautics and trains). Context and motivation As a result of the reduction in the size of CMOS transistors, low-frequency noise (LFN) due to charge
Post-Doctorant - Structural, chemical and electronic study at the sub-Angstrom scale of nitrogen polarity NbN based transistors (H/F)

ENSICAEN | Caen, Basse Normandie | France | about 2 months ago

laboratory. Transmission electron microscopy will be used for a structural, chemical, and electronic study of high electron mobility transistors (HEMTs) based on Niobium nitride (NbN) as part of this contract

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