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, the post-doc will perform experimental characterization of Low Frequency Noise (LFN) and Random Telegraph Noise (RTN) in FD-SOI components of ST Microelectronics, including critical extractions of parameters
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measurements. This work will be carried out at the Microelectronics Technology Laboratory (LTM), a joint research unit of the CNRS and the University of Grenoble Alpes (UGA) (UMR 5129) located on the CEA-LETI
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