-
to the determination of crystal and magnetic structures in condensed matter systems. You will be enrolled at the Technical University of Denmark, where you will spend 6 months. The current slowdown in transistor density
-
at developing new stacks of epitaxial layers containing Gallium Nitride (GaN) on Silicon substrate to demonstrate a power transistor capable of withstanding voltages higher than 1200 V. In particular, the project
Enter an email to receive alerts for transistor "https:" positions