PhD Development of new epitaxial buffer layer schemes for avalanche-capable GaN on Silicon power switching transistors M/F
17 Jan 2026
Job Information
- Organisation/Company
CNRS- Department
Centre de recherche sur l'hétéroepitaxie et ses applications- Research Field
Engineering
Physics
Technology- Researcher Profile
First Stage Researcher (R1)- Application Deadline
6 Feb 2026 - 23:59 (UTC)- Country
France- Type of Contract
Temporary- Job Status
Full-time- Hours Per Week
35- Offer Starting Date
15 Apr 2026- Is the job funded through the EU Research Framework Programme?
Not funded by a EU programme- Is the Job related to staff position within a Research Infrastructure?
No
Offer Description
The proposed thesis will take place at CRHEA (Valbonne, 06). It will focus on the epitaxy of these new structures using MBE and MOVPE techniques and their structural and electrical characterizations which will be validated by the partners through the manufacturing and characterization of test devices.
To face the multiple challenges of the energy transition, whether at the generation, transport or use of electricity, extremely efficient electronic components are necessary. Thus, new components are developed from gallium nitride (GaN) to manufacture fast switches and rectifiers that can withstand high voltages for reduced component sizes compared to those manufactured with Silicon.
However, all these components that should reduce energy losses during all stages of electricity transformation remain difficult to manufacture in large quantities at low cost. Whether for consumer applications below 220 V, or for electric or hybrid vehicles between 600 and 1200V, the epitaxial deposition of semiconductors such as GaN on large diameter substrates is a key point to lower manufacturing costs. For this purpose, silicon substrates are used as a support, but the large differences in crystalline properties (lattice parameters, expansion coefficients) between GaN and Silicon are at the origin of crystalline defects and mechanical stresses harmful to a controlled manufacturing of high-performance components. To address this issue, the project aims at developing new stacks of epitaxial layers containing Gallium Nitride (GaN) on Silicon substrate to demonstrate a power transistor capable of withstanding voltages higher than 1200 V.
In particular, the project aims to remove the limitations related to the breakdown that usually requires the use of very thick GaN films. These ideas were the subject of a first proof of principle at lower voltage (500 V) with thin films. Technical difficulties remain however for the realization of optimal epitaxial layers, in accordance with this new approach and able to withstand a voltage of 1400 V. The proposed thesis will explore the different epitaxial strategies by MBE, MOVPE or their combination. Within this project funded by the French National Research Agency (ANR), the company III-V lab will provide support with the epitaxy of structures by MOVPE. The LN2 laboratory will conduct design activities through simulations and manufacture test components. The electrical characterizations in continuous and pulsed modes will be carried out under high voltage at LAAS to demonstrate the advantages of these new devices.
Where to apply
- Website
- https://emploi.cnrs.fr/Candidat/Offre/UMR7073-MICPEF-095/Candidater.aspx
Requirements
- Research Field
- Engineering
- Education Level
- Master Degree or equivalent
- Research Field
- Physics
- Education Level
- Master Degree or equivalent
- Research Field
- Technology
- Education Level
- Master Degree or equivalent
- Languages
- FRENCH
- Level
- Basic
- Research Field
- Engineering
- Years of Research Experience
- None
- Research Field
- Physics
- Years of Research Experience
- None
- Research Field
- Technology
- Years of Research Experience
- None
Additional Information
Additional comments
To carry out these studies, skills in the fields of material science, solid-state physics, and micro-nano manufacturing would be a major asset.
- Website for additional job details
https://emploi.cnrs.fr/Offres/Doctorant/UMR7073-MICPEF-095/Default.aspx
Work Location(s)
- Number of offers available
- 1
- Company/Institute
- Centre de recherche sur l'hétéroepitaxie et ses applications
- Country
- France
- City
- VALBONNE
- Geofield
Contact
- City
VALBONNE- Website
http://www.crhea.cnrs.fr/
STATUS: EXPIRED
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