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Post-Doctorant - Structural, chemical and electronic study at the sub-Angstrom scale of nitrogen polarity NbN based transistors (H/F)

ENSICAEN | Caen, Basse Normandie | France | 2 months ago

. Project N POLAR: context and objectives The N POLAR project aims at developing nitrogen-polarity III nitrides on silicon substrates by molecular beam epitaxy. The N-polarity III nitrides will be obtained by

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