11 mbe Postdoctoral positions

Postdoc in semiconductor epitaxy

Universite de Montpellier | Montpellier, Languedoc Roussillon | France | 1 day ago

://nanomir.edu.umontpellier.fr/ ) is a world leader in GaSb-based mid-infrared (MIR) optoelectronic devices. The group specializes in the molecular beam epitaxy (MBE) growth of III-V semiconductors and operates 3 reactors, inc. a

Postdoctoral researcher (M/F), synthesis of crystal phase heterostructures by Molecular Beam Epitaxy

CNRS | Palaiseau, le de France | France | about 2 months ago

optimize the growth of GaAs nanowires integrating crystal-phase heterostructures by molecular beam epitaxy (MBE). Contribute to scientific writing, presentation of results, and promotion of the project's

Materials and Process Development for Ultraviolet Detector Technologies

National Aeronautics and Space Administration (NASA) | Pasadena, California | United States | about 1 month ago

engineering methods to fabricate advanced detector technologies and optical components. Research within the UV detector technology team has largely focused on the use of molecular beam epitaxy (MBE) for band

Permanent Researcher in Ultra-Wide-Bandgap Semiconductors at CEA-IRIG, Grenoble

CEA | France | 16 days ago

research in wide bandgap semiconductors and is closely linked to the recent installation of a dual MBE cluster dedicated to III-nitride and III-oxide growth. Applicants must propose an innovative research

Data Scientist / Postdoctoral Researcher in the group 'Evolutionary Processes Modeling'

Centre for Genomic Regulation | Spain | about 3 hours ago

; http://www.nature.com/articles/ng.3831 ; academic.oup.com/mbe/article-abstract/36/8/1701/5475505 ) and de novo variants (www.nature.com/articles/s41467-020-17162-z ). Here, a particular focus of the

Postdoctoral Researcher in Altermagnetic Spintronics - Physics and Engineering of Nanodevices Group

ICN2 | Spain | about 24 hours ago

guided by theoretical predictions and will combine magnetotransport measurements with material growth and characterization, including MBE and angle-resolved photoemission spectroscopy (ARPES). What We

HRS2026/006 Postdoctoral Position in Molecular Beam Epitaxy and Characterization of III-V Quantum Dots

UNIVERSIDAD POLITECNICA DE MADRID | Spain | about 2 months ago

structures for single photon emitters, a key component of the future quantum technologies that will revolutionize society. He/she will develop nanostructures by molecular beam epitaxy (MBE) and will perform

Postdoctoral Appointee —Fabrication for Photonic and Quantum Devices

Argonne | Lemont, Illinois | United States | about 3 hours ago

thin-film growth and characterization (oxides preferred), using sputtering (preferred), PLD, or MBE. Familiarity with synchrotron-based X-ray techniques and electron microscopy Knowledge of quantum

Post Doctoral Scholar

The Ohio State University | United States | 3 months ago

with molecular beam epitaxy (MBE). Experience with magneto-optic Kerr effect (MOKE), Hall effect measurements, SQUID magnetometry, X-ray diffraction (XRD), AFM, or related characterization techniques

Post Doctoral Scholar

The Ohio State University | Columbus, Illinois | United States | 2 months ago

techniques. Preferred Qualifications: Experience with molecular beam epitaxy (MBE). Experience with magneto-optic Kerr effect (MOKE), Hall effect measurements, SQUID magnetometry, X-ray diffraction (XRD), AFM