1 mbe PhD positions at CNRS

PhD Development of new epitaxial buffer layer schemes for avalanche-capable GaN on Silicon power switching transistors M/F

CNRS | La Valbonne, Rhone Alpes | France | about 2 months ago

at CRHEA (Valbonne, 06). It will focus on the epitaxy of these new structures using MBE and MOVPE techniques and their structural and electrical characterizations which will be validated by the partners