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://nanomir.edu.umontpellier.fr/ ) is a world leader in GaSb-based mid-infrared (MIR) optoelectronic devices. The group specializes in the molecular beam epitaxy (MBE) growth of III-V semiconductors and operates 3 reactors, inc. a
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Postdoctoral researcher (M/F), synthesis of crystal phase heterostructures by Molecular Beam Epitaxy
optimize the growth of GaAs nanowires integrating crystal-phase heterostructures by molecular beam epitaxy (MBE). Contribute to scientific writing, presentation of results, and promotion of the project's
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research in wide bandgap semiconductors and is closely linked to the recent installation of a dual MBE cluster dedicated to III-nitride and III-oxide growth. Applicants must propose an innovative research
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