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Field
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for electrochemical cells and stacks FEM simulation to investigate seal compression Manufacture of seals on a CNC dispenser and subsequent characterization What you bring to the table Studies in the field of mechanical
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collaborators. The activities will include: • Electromagnetic modeling and numerical simulations (e.g., FDTD, FEM) • Design of metasurface architectures based on dielectric materials available at CRHEA
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solid understanding of solid mechanics, continuum mechanics and material behaviour. Proficiency in programming (e.g., Python) and experience with numerical methods (e.g., FEM) are desirable. Familiarity
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Expertise in FEM software (ABAQUS, ANSYS, SAP2000) and coding (Python/MATLAB). Professional engineering licensure (HKIE/CEng) or eligibility is a plus. Candidates for Professor or above should have
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polymers, Injection moulding, extrusion, extrusion-based 3D printing, direct ink writing, finite element method (FEM). Specific Requirements Scientific knowledge in: Processing and manufacturing of polymers
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on materials. Background (preferential): Materials science Additive manufacturing Metallic alloys Material characterization/Materials testing FEM/CFD simulations Additional background that will be valued in
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(photolithography, metal evaporation, etching) Experience with packaging schemes such as flip-chip bonding, anisotropic conductive film bonding and wire bonding Finite element Method (FEM) simulations (MEMS, Electro
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collaborators. The activities will include: • Electromagnetic modeling and numerical simulations (e.g., FDTD, FEM) • Design of metasurface architectures based on dielectric materials available at CRHEA
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under thermomechanical fatigue (TMF) using the finite element method (FEM). One part of the project involves combining experimental investigations and FE simulations of damage behaviour at the macroscopic
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Engineering of the State University of Campinas (FEM-UNICAMP). This opportunity is open to candidates of any nationality. The selected candidate will receive a FAPESP Post-Doctoral fellowship in the amount of R