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://nanomir.edu.umontpellier.fr/ ) is a world leader in GaSb-based mid-infrared (MIR) optoelectronic devices. The group specializes in the molecular beam epitaxy (MBE) growth of III-V semiconductors and operates 3 reactors, inc. a
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Postdoctoral researcher (M/F), synthesis of crystal phase heterostructures by Molecular Beam Epitaxy
optimize the growth of GaAs nanowires integrating crystal-phase heterostructures by molecular beam epitaxy (MBE). Contribute to scientific writing, presentation of results, and promotion of the project's
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of locally grown epitaxial 3D topological insulator thin films (BiSb, BiSbTe and BiSbTeSe) in view of further 3DTI heterostructuring. Given the relatively-low mobilities of 3DTI thin films (generally below
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. Project N POLAR: context and objectives The N POLAR project aims at developing nitrogen-polarity III nitrides on silicon substrates by molecular beam epitaxy. The N-polarity III nitrides will be obtained by
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semiconductor physics (ideally epitaxy), a strong publication record, and the ability to lead an independent research program are required. LanguagesENGLISH Research FieldPhysicsEngineeringYears of Research
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contactless measurement of acoustic waves. The epitaxy of GaN/AlGaN heterostructures is performed by collaborators at CHREA, and the project will benefit from collaborations with the MiNaPhot team
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. The postdoctoral researcher will grow thin films using pulsed laser deposition and will work in particular on the epitaxy of perovskite films. He or she will use ultrafast optical and magneto-optical facilities as