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-destructive, fast, and suitable techniques for qualifying integrated electronic circuits at the end of their first life cycle, in order to facilitate their reuse. 1. Study of the main aging mechanisms and their
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wave enantioselective electron paramagnetic resonance (TWEEPR). The successful candidate will contribute to the development of novel GHz experimental techniques within the Magneto-optics team
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-depth expertise in Computer Vision and Photogrammetry. - Mastery of state-of-the-art Neural Rendering (NeRF, NeuS, SDF). - Knowledge of Photometric Stereo methods. Operational Skills: - Advanced
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of contributions to the international ePIC (electron Proton-Ion Collider experiment) collaboration associated with the construction of the future Electron-Ion Collider (EIC, Brookhaven National Laboratory -BNL, New
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numerical results with observations from scanning and transmission electron microscopy provided by the partners of the ANR project IMP3D (https://anr.fr/Projet-ANR-24-CE08-3737 . - Select a discrete
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. The position is primarily based in the Electronics team of GREYC in Caen, France (20 permanent researcher and 3 permanent Engineers and Technician). The successful candidate will work within the functional oxide
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Postdoctoral researcher (M/F), synthesis of crystal phase heterostructures by Molecular Beam Epitaxy
outcomes. Molecular beam epitaxy (MBE) growth of GaAs nanowires on patterned Si/SiO₂ substrates. Structural analysis by electron microscopy (in situ TEM, electron diffraction, zone-axis indexing). Automated
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of view (Raman spectroscopy, scanning electron microscopy, atomic force microscopy, etc.); - Participate in progress meetings and report writing. The work will be carried out at the Laboratory
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involving roughly the same number of scientists: New electronic states of matter; Physical phenomena at reduced dimensions; Soft matter and the physical-biological interface. In the first axis are grouped
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rely on the precise control and understanding of material, electronic and topological properties of 3DTIs. In this project, we propose to characterize the electronic properties of gated devices