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graphene-based field effect transistor sensors with biological receptors for infection biomarkers, and optimize this technology for diagnosing infections in the wound settings. As a postdoctoral researcher
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electron mobility transistors and graphene, but also to large band gap and low symmetry semiconductors such as Ga2O3. These materials and components lay the foundation for the next generation of high
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advanced power semiconductor devices such as wide-bandgap transistors and diodes; novel converter topologies; intelligent control; and integration of AI into secure power management systems. Micro/Nano
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limitations in materials, devices concepts and processing of transistors based on III-nitride semiconductors. About us The Microwave Electronics Laboratory (MEL) at the Department of Microtechnology and
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been applied to two-dimensional semiconductor systems such as nitride-based high electron mobility transistors and graphene, but also to large band gap and low symmetry semiconductors such as Ga2O3
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equivalent. Skills Essential: C1 Knowledge of electronic semiconductor device operation and characterisation. In particular, in-depth understanding of transistor operation and electrical characterisation
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architectures are required, such as those inspired by the organization of the human brain that utilize novel materials. Ferroelectric Field-Effect Transistors (FeFETs) exemplify the latter, regarded as a pivotal
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for employees and Employee Dependent Tuition Assistance Scholarship (EDTAS) award opportunities! Details available at: https://humanresources.ku.edu/tuition-assistance KU's excellence is a result of the
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offers up to 12 credit hours per year for employees and Employee Dependent Tuition Assistance Scholarship (EDTAS) award opportunities! Details available at: https://humanresources.ku.edu/tuition
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field effect transistor devices on flexible substrates. The specific task of the position is to design and fabricate an implantable device for bidirectional signal transmission (measurement and