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jonctions d'une nouvelle technologie. Nos transistors sont fabriqués avec un budget thermique limité pour l'intégration séquentielle en 3D, ce qui rend l'activation des dopants très difficile. Notre équipe
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sputtering methods; Experience in constructing and testing organic field-effect transistors; Experience using gloveboxes; Openness to new concepts, ease of learning; Independence and
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spintronics team in charge of developing terahertz emitters and field-effect transistors based on two-dimensional (2D) materials such as transition metal dichalcogenides. He will work within the Spintec
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-state diodes and transistors with unprecedented blocking voltages, far exceeding the capabilities of modern technologies based on SiC and GaN WBG semiconductors. Ga2O3 devices can thus enable development
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limitations in materials and device concepts of transistors based on III-nitride semiconductors. In this work device characterization and modelling are important tools enabling better understanding and
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School graduates over a thousand students who are ready to take on great ambitions and challenges. For more details, please view: https://www.ntu.edu.sg/eee We are seeking a highly motivated Postdoctoral
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, microsystems for injecting drugs) or transport (Lidar for aeronautics and trains). Context and motivation As a result of the reduction in the size of CMOS transistors, low-frequency noise (LFN) due to charge
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School graduates over a thousand students who are ready to take on great ambitions and challenges. For more details, please view: https://www.ntu.edu.sg/eee At E2ESR Lab www.wrzhanglab.com , we focus
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, nuclear fission and fusion reactions within atomic nuclei, nonlinear responses and chemical reactions in diodes and transistors within solids, and element formation in space. The academic domain pursued by
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involves regrowing a semiconductor layer to form a high-quality gate channel, typically using selective epitaxial growth. The configuration of the semi-insulating vertical GaN transistor designed by us is