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transistor (nw-FET) technologies. It will enable the access to protein conformation-charge synergetic dynamics for molecular biology research and biomedical applications. This project involves both
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printed thin film capacitors and transistors (mandatory). Good communication and interpersonal skills. Fluency in English and Portuguese (written, understood, and spoken). Applicable legislation: Portuguese
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of organic semiconductors to devices such as field-effect transistors, solar cells, and thermoelectric conversion devices. Keywords: Organic semiconductors, Organic crystals, Organic synthesis, Organic devices
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expanding in the industries of solar cells, photodetectors, transistors. These materials, primarily composed of carbon-based small molecules or macromolecules, offer advantages over traditional inorganic
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new class of multifunctional electronics. Please visit our lab website for more details (https://personal.ntu.edu.sg/wlleong/). Key Responsibilities: Design, fabricate and characterize high performance
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of semiconductor components. Wide bandgap semiconductor materials such as GaN are the ideal candidates to meet this new challenge. The work concerns new manufacturing processes for high electron mobility transistor
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contribute to cutting-edge research on Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) and Insulated Gate Bipolar Transistor (IGBT) devices for next-generation power electronics applications
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range. GaN is a wide bandgap seminconductor with a strong n-type High Electron Mobility Transistor technology, but the completementary p-type transistor is still early investigation. P-type GaN
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of components at cryogenic temperature and the use of simplified transistor models such as s-EKV or ACM. Project description: Industrially fabricated devices based on the fully-depleted silicon-on-insulator (FD
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thin films (e.g. polymer, small molecules, COFs) by solution-processing methods, and produce transistor device structures using such thin films characterize the resulting devices and potentially circuits