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PhD offer (funding secured) - Ultra-wide bandgap semiconductors synthesis using low-temperature plasmas: deposition, fundamental aspects and process optimization through artificial intelligence approach

Ecole polytechnique | Palaiseau, le de France | France | about 20 hours ago

, they operate at high temperature (>600 °C), compromising the combination of materials having different thermal expansion coefficients (TEC). In order to go beyond the predominance of silicon, it is required