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Position overview Position title: Learning Specialist Salary range: A reasonable salary range estimate for this position is $54,166-$109,666. The posted UC academic salary scales (https
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, and procedures related to campus safety. Go here to review: https://safety.temple.edu/reports-logs/annual-security-report You may request a copy of the report by calling Temple Department of Public
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of Artificial intelligence for De-Novo molecular design Machine learning/Neuronal networks to develop novel drug discovery tools Molecular modeling and simulation Theoretical biophysical medicinal chemistry Deep
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Engineering), contributions to the Manchester BHF Centre of Research Excellence (CRE), with a focus on Theme 5: Computational modelling, simulation, and large language models. AI for Science in Manchester BHF
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on the design and modelling of ultra-high voltage IGBTs, thyristors, and SiC devices for HVDC and energy systems. Embedded within the EPSRC Rewire network, the project strengthens UK capability in high-voltage
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IT4Innovations National Supercomputing Center, VSB - Technical University of Ostrava | Czech | about 1 month ago
, and innovation centre active in the fields of High-Performance Computing (HPC), Data Analytics (HPDA), Quantum Computing (QC), Artificial Intelligence (AI) and their applications. For more, see https
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and government partners. We are looking to recruit a passionate and committed researcher to drive forward our work on simulating possible transitions away from individualised car ownership. This work
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an excellent work ethic and background in molecular simulation and machine learning. Job responsibilities will include: Develop simulation algorithms and software to model challenging gas adsorption behavior in
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to the development of compact, high‑performance imaging systems (i.e. for security and medical applications). Key Research Activities Fabrication and Characterisation of Silicon Pillars: Modelling and Simulation: THz
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-physics TCAD simulations aimed at efficiently modeling charge transport, Joule heating mechanical deformations and ion migration in electronic devices such as MOS transistors and NAND memories