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avalanche diodes (SPADs) based on germanium-on-silicon (Ge-on-Si) epilayuers capable of detecting infrared radiation in the short‑wave infrared (SWIR) range (λ=900-1600 nm). Compared to other Ge-based SPADs
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compared to those manufactured with Silicon. However, all these components that should reduce energy losses during all stages of electricity transformation remain difficult to manufacture in large quantities
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on a variety of substrates, including silicon, silicon carbide (SiC), and aluminum nitride (AlN), utilizing Aalto University's state-of-the-art AIXTRON MOVPE reactor. Following growth, the materials will
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National Aeronautics and Space Administration (NASA) | Pasadena, California | United States | 9 days ago
structure engineering and passivation of silicon-based photodetectors [1, 2]. Developments in recent years has been geared toward wafer-scale processing as well as improving the space worthiness of MBE
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the test engineering team on silicon characterization and validation Where to apply Website https://www.imec-int.com/en/work-at-imec/job-opportunities/dft-architect Requirements Research
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Technology. In the area of Photonic Devices, we are seeking candidates with substantial research experience in emerging technologies such as silicon, silicon nitride, and lithium niobate photonic devices
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circuit-level simulation, system modeling, and in-silicon hardware prototyping to evaluate approaches against performance metrics such as energy efficiency, inference accuracy and computational latency
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6th April 2026 Languages English English English The Department of Materials Science and Engineering has a vacancy for a PhD Candidate in magnetohydrodynamic modeling of electric arcs in silicon
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of the ANR projects KiSS et LAMORSIM. The main objective is to develop methodologies for achieving controlled laser-induced local modifications of silicon. In this work, the researcher will develop
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