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staff position within a Research Infrastructure? No Offer Description Development of silicon carbide (SiC) semiconductor technologies for quantum bits based on controlled surface and interface defects
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foundations for silicon carbide (SiC) and polycrystalline diamond (PCD) timing devices that surpass silicon’s limit. Your Profile We are looking for a candidate who is not only technically strong, but also
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deployment enabling validation and demonstration of real-world applications. For more details, please view https://www.ntu.edu.sg/erian We are looking for a Research Fellow to design and develop advanced power
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-SiC integration in classical/quantum photonic circuits, in synergy with academic and industrial partners. Qualifications: Candidates must have a two-year master's degree or a similar degree with an
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silicon carbide (SiC) fibres (monofilaments) are used in C/C or CMC composite materials (ceramic matrix composites) by the aerospace industry (brake discs, rocket engine nozzles, thrust chambers, leading
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Research Group, University of Bristol, to develop high-performance SiC and GaN power electronics, with the associated high-speed sensing. You will be offered one of the following three salary grades
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or if you have questions about a job posting, please contact Human Resources at 479.575.5351. Department: Electrical Engineering and Computer Science Department's Website: https://engineering.uark.edu
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carbide (SiC) materials with high-temperature properties. The dissertation will focus on the preparation of silicon carbide ceramics using a novel approach without traditional sintering additives and at a
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optical properties is important. The PhD thesis aims at developing the deposition process to get ultra-high purity amorphous-SiC thin films by HWCVD (Hot Wire Chemical Vapor Deposition) and PVD (Magnetron
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on the design and modelling of ultra-high voltage IGBTs, thyristors, and SiC devices for HVDC and energy systems. Embedded within the EPSRC Rewire network, the project strengthens UK capability in high-voltage