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staff position within a Research Infrastructure? No Offer Description Development of silicon carbide (SiC) semiconductor technologies for quantum bits based on controlled surface and interface defects
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foundations for silicon carbide (SiC) and polycrystalline diamond (PCD) timing devices that surpass silicon’s limit. Your Profile We are looking for a candidate who is not only technically strong, but also
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, including both chip-to-wafer (C2W) and chip-to-chip (C2C) approaches. Core technical directions Heterogeneous integration of wide-bandgap (WBG) electronic components (e.g., GaN/SiC and related platforms
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switching in the range up to several kVs (Si, SiC, GaN). Ga2O3-based devices can be also invaluable for faster deployment of electric means of transport thanks to development of faster charging systems and
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semiconductors such as GaN and SiC and to enable reliable operation at voltages >6 kV, where suitable alternative is currently unavailable. Such devices are expected to find applications in high-efficiency power
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silicon carbide (SiC) fibres (monofilaments) are used in C/C or CMC composite materials (ceramic matrix composites) by the aerospace industry (brake discs, rocket engine nozzles, thrust chambers, leading
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deployment enabling validation and demonstration of real-world applications. For more details, please view https://www.ntu.edu.sg/erian We are looking for a Research Fellow to design and develop advanced power
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Website https://www.uni-saarland.de/verwaltung/berufungen/online-berufungsportal/w2759-… Requirements Research FieldPhilosophy » OtherEducation LevelPhD or equivalent Skills/Qualifications W2 professorial
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-SiC integration in classical/quantum photonic circuits, in synergy with academic and industrial partners. Qualifications: Candidates must have a two-year master's degree or a similar degree with an
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Research Group, University of Bristol, to develop high-performance SiC and GaN power electronics, with the associated high-speed sensing. You will be offered one of the following three salary grades