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silicon carbide (SiC) fibres (monofilaments) are used in C/C or CMC composite materials (ceramic matrix composites) by the aerospace industry (brake discs, rocket engine nozzles, thrust chambers, leading
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Research Group, University of Bristol, to develop high-performance SiC and GaN power electronics, with the associated high-speed sensing. You will be offered one of the following three salary grades
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, THz Circuits, Photonic Integrated Circuits, SerDes, Memory Circuits and Computer Architecture High-voltage ICs, Gallium-Nitride (GaN) and Silicon-Carbide (SiC) driver ICs and monolithic GaN ICs Imagers
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Department's Website: https://engineering.uark.edu/ Summary of Job Duties: The Design Engineer I will be part of the design services team at the University of Arkansas’ Multi-User Silicon Carbide (MUSiC
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Department's Website: https://engineering.uark.edu/ Summary of Job Duties: The MUSiC Epi Process Engineer III will be primarily responsible for the creation of processes and integration of those processes
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annual leave, plus 9 buildings closed days for all full time staff. Use our total rewards calculator: https://www.hw.ac.uk/about/work/total-rewards-calculator.htm to see the value of benefits provided by
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14 Nov 2025 Job Information Organisation/Company National University of Science and Technology POLITEHNICA Bucharest Department Project: A New Class of Power Si-SiC Hybrid Devices with Very Low
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on the safest and most efficient way to distribute protected power to all units Technologies for power conversion. Working on the use of GaN and SiC switches, digital control, new topologies, etc. Apart from
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at conferences. Minimum Education Requirement: Doctorate (Academic) #1 Major: electrical engineering Experience : Required: Ph.D. in Electrical Engineering; experience with power electronics using SiC
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inverter topologies (e.g. Dual inverter, 4 bridge inverter) with modern semiconductor devices (GaN, SiC) The aim is to implement own designed algorithms in a signal processor and simulation environment