Sort by
Refine Your Search
-
Listed
-
Category
-
Country
- United States
- France
- United Kingdom
- Sweden
- Poland
- Germany
- Netherlands
- Canada
- Austria
- China
- Italy
- Denmark
- Japan
- Singapore
- Belgium
- Ireland
- Slovakia
- Spain
- Norway
- Worldwide
- Switzerland
- Australia
- Finland
- Hong Kong
- Mexico
- Romania
- Saudi Arabia
- Armenia
- Brazil
- Czech
- Lithuania
- Portugal
- Slovenia
- 23 more »
- « less
-
Program
-
Field
-
fabrication route, supported by Silson’s extensive expertise. This project offers a unique opportunity to work at the intersection of semiconductor fabrication, photonics, and THz technology, contributing
-
-infrared (FIR) semiconductor electronics aims to establish frontline semiconductor terahertz electronics for far-infrared space instruments. The goal is to achieve high receiver sensitivity and stability
-
of several stacked solar cell layers of different materials (III–V compound semiconductors, e.g., GaAs). With a four-junction cell, we have achieved a record efficiency of 47.6%. For terrestrial use
-
? Not funded by a EU programme Is the Job related to staff position within a Research Infrastructure? No Offer Description Heterostructures exploiting Group IV semiconductors such as Si, Ge and becoming
-
project The ERC project Far-infrared (FIR) semiconductor electronics aims to establish frontline semiconductor terahertz electronics for far-infrared space instruments. The goal is to achieve high receiver
-
training, exchanges, and career development for PhD students and postdocs. Learn more at https://www.muoniverse.ch/ . Muoniverse positions often serve as bridges between individual research groups and
-
://strathvacancies.engageats.co.uk/Vacancies/W/2997/0/462476/15019/professor-of-advanced-semiconductor-packaging-753743 https://nmis.scot/ Postal Code G1 1XJ E-Mail matt.boyle@strath.ac.uk STATUS: EXPIRED X (formerly Twitter
-
. This PhD project aims at developing III-V semiconductor laser sources—especially frequency-comb lasers on InP substrates—and exploiting them for terahertz (THz) generation through optical beating
-
, and include, for example, semiconductor materials, thermoelectric materials, piezoelectric materials, luminescent materials, and sensor materials. In particular, post-silicon materials such as wide-gap
-
semiconductor device fabrication techniques, including lithography, CVD, dry and wet etching, metallisation and CMP processes. Close interaction with facility users, equipment engineers, suppliers and academic