Sort by
Refine Your Search
-
Listed
-
Category
-
Country
- United States
- France
- United Kingdom
- Sweden
- Poland
- Germany
- Netherlands
- Canada
- Austria
- China
- Italy
- Denmark
- Japan
- Singapore
- Belgium
- Ireland
- Slovakia
- Spain
- Norway
- Worldwide
- Switzerland
- Australia
- Finland
- Hong Kong
- Mexico
- Romania
- Saudi Arabia
- Armenia
- Brazil
- Czech
- Lithuania
- Portugal
- Slovenia
- 23 more »
- « less
-
Program
-
Field
-
Systems Lab (http://www.bioee.ee.columbia.edu ) at The Fu Foundation School of Engineering & Applied Science of Columbia University in the City of New York invites applications for an Associate Research
-
identification with circularly polarized light, Journal of Biophotonics 14, e202000380 (2021). [3] F. Bottegoni et al., Spin-charge interconversion in heterostructures based on group-IV semiconductors, La Rivista
-
dynamically developed material in semiconductor industry marked by a Nobel Prize for invention of blue/white LEDs. III-N materials are currently attracting a lot of interest also for applications in power, high
-
(Ga₂O₃) is a novel ultra-wide-bandgap semiconductor material with a bandgap energy (Eg) of approximately 5 eV and a theoretical critical breakdown field (Ecr) exceeding 8 MV/cm, which makes it highly
-
. Description: KACE Systems Management Appliance Administrator Console In the last few years we have seen rapid growth of III-V semiconductors geared towards a variety of applications where silicon performance
-
activities based on advanced spectroscopy and spectrometry techniques, focusing on several areas of advanced materials, such as silicon devices and wide-bandgap semiconductors, advanced coating and new
-
collaboratively with several graduate and undergraduate students. You will benefit from close interaction with semiconductor partners, including ASML. Where to apply Website https://www.academictransfer.com/en/jobs
-
layered semiconductor characterized by an anisotropic crystalstructure and quasi-one-dimensional ribbon-like morphology. Its electronic structure is predicted to host relatively flat bands associated with
-
photonic devices based on III-Nitrides semiconductors. This will include MOCVD growth, chip fabrication, and testing of GaN and its alloys for optoelectronic applications as well as projects on UV laser
-
the area of Semiconductor Design and Packaging Automation. The School of Manufacturing Systems and Networks (https://msn.engineering.asu.edu/), one of the eight Fulton Schools, houses a vibrant faculty at