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expertise for semiconductor applications. The research associate will have the following responsibilities: Responsibilities: Uphold lab upkeep and maintenance standards to ensure a safe and efficient research
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; to cooperate with the project team for the achievement of the project objectives. Where to apply Website https://karjera.ktu.edu/en-GB/jobs/6963207-research-project-non-fullerene-organ… Requirements Research
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objectives. Where to apply Website https://karjera.ktu.edu/en-GB/jobs/6963421-research-project-advanced-materials-… Requirements Research FieldChemistryEducation LevelPhD or equivalent Specific Requirements
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or Sc-doped VO2 layer and optimization of the deposition conditions, in order to try to increase the semiconductor-metal transition temperature, relative to the case of undoped VO2 (~68 ºC). 2. Design
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information at: http://www.ifw-dresden.de . The Institute for Metallic Materials (Prof. K. Nielsch) of the IFW Dresden offers a Post Doc Position (m/f/div) on the following topic: Project Coordination and Build
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to the electrolysis system. Even though the rectifier is a well-established system in high-power applications, the state-of-the-art technology is based on IGBT semiconductors with limited switching frequency. The new
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, aiming at: Dvelopment of compact models of thin-film transistors based on the oxide semiconductor TFT process existing at CENIMAT|i3N, including effects of temperature and mechanical stress; Integration
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to develop a new class of semiconductors based on chalcogenide (ABS3) and oxysulfide perovskites (ABSxO3-x) based on abundant elements. These perovskites are currently successfully grown by Pulsed Laser
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. The doctoral research will target thermal transport and energy conversion in 2D semiconductors, particularly transition metal dichalcogenides (TMDs). Optothermal and frequency-domain electrical methods will be
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Nanophononics is a promising field with great potential for controlling sound and heat at the nanometer scale. Over the past thirty years, intensive research on the vibrational properties of semiconductor