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? No Offer Description - work environment: The Institut d’Electronique et des Systèmes (IES) is a joint research unit from U. Montpellier and CNRS. The nanoMIR research group (https
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identification with circularly polarized light, Journal of Biophotonics 14, e202000380 (2021). [3] F. Bottegoni et al., Spin-charge interconversion in heterostructures based on group-IV semiconductors, La Rivista
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nm optical microscopy." Optics Express 21(22): 26219-26226, 2013. http://dx.doi.org/10.1364/Oe.21.026219 Optics; Semiconductors; Ultraviolet; Electromagnetic simulations; Lasers; Nanoscale
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. Description: KACE Systems Management Appliance Administrator Console In the last few years we have seen rapid growth of III-V semiconductors geared towards a variety of applications where silicon performance
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layered semiconductor characterized by an anisotropic crystalstructure and quasi-one-dimensional ribbon-like morphology. Its electronic structure is predicted to host relatively flat bands associated with
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activities based on advanced spectroscopy and spectrometry techniques, focusing on several areas of advanced materials, such as silicon devices and wide-bandgap semiconductors, advanced coating and new
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, physics, engineering or a related fiel In-depth knowledge of semiconductor technology and the physics of multijunction solar cells Hands-on experience in processing thin films and perovskite/silicon solar
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bandgap (Eg) semiconductor materials. Gallium oxide (Ga2O3) is a good example of such material – with Eg ~4.9 eV and high critical field which surpasses those of the mainstream semiconductors for power
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-insulating vertical GaN devices are a class of power semiconductor devices that utilize Gallium Nitride (GaN) material in a vertical configuration, offering significant advantages for high-voltage, high
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(Ga2O3) is an emerging ultrawide bandgap (UWBG, Eg=4.8–5.3 eV) semiconductor material, recently recognized as a highly promising for high-voltage and high-power applications. This material can enable solid