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Metrology and Prototyping of Wide-Bandgap Semiconductor Quantum Nanowire Structures and Devices NIST only participates in the February and August reviews. Semiconductor quantum nanowires offer new
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Causal Green’s Function for Modeling of Phonon Transport in Nanoscale Semiconductors: Application to Devices for Thermal Management and Energy Applications NIST only participates in the February and
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to characterize 2D materials, semiconductor devices, and biological materials from DC to the THz regime. The measurements enable the engineering of dielectric, magnetic and electrical transport properties of thin
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of electrokinetic manipulation of cells and other bioparticles in semiconductor-based lab-on-a-chip devices, and using a variety of microscopic techniques such as epifluorescence, confocal, TIRF, and AFM
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of the semiconductor industry in the US. Numerous gases are used in the production of semiconductor chips, and the accurate metering of these gases into the process chamber is critical for maximizing device throughput
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, optical inspection metrology for semiconductor devices. key words Fourier Ptychography; Optical Microscopy; Deep Ultraviolet; Extreme Ultraviolet; Nanoscale Imaging; Semiconductor Metrology; Computational
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RAP opportunity at National Institute of Standards and Technology NIST Functionalizing Semiconductor Surfaces Location Physical Measurement Laboratory, Nanoscale Device Characterization Division
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RAP opportunity at National Institute of Standards and Technology NIST Femtosecond Time-Resolved Measurements in Semiconductor Materials Location Physical Measurement Laboratory, Nanoscale
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channel in diamond FET. The hole transport in such a device sensitively depends on the semiconductor-gate insulator interface and subsurface scatterers including charged traps. The effort is to optimize
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properties in semiconductor device materials. This research is expected to be executed through internal and external collaborations with comprehensive expertise in advanced material simulation, high throughput