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conductive regions, • Investigating doping mechanisms and their stability, • Electrical and morphological characterization of transistors, • Evaluating device stability under real-world operating conditions
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universities and research centers, and 3 companies, from 6 EU countries. The mission of the FADOS network is to use the large expertise on all aspects of doping of organic semiconductors that is available in
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to the success of the whole institution. The Faculty of Electrical and Computer Engineering the Institute of Semiconductors and Microsystems together with the German Cancer Research Center site Dresden, Division
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to propose a breakthrough bottom-up approach compared to the classical top-down semiconductor way, time and cost consuming. Biocompatible nanocrystals of GaN and In0.25Ga0.75N have been successfully
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. The project will involve significant collaboration, sample exchange, semiconductor and device characterisation. For more information on the position please contact Prof. Phil Dale phillip.dale@uni.lu or Prof
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on conceptualizing, fabricating, and characterizing effective memristive devices, with the goal of forming device networks for realizing the physical learning paradigm developed at AMOLF. You will integrate
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authorized by the competent authority of the MESR. In recent years, halide perovskites have demonstrated exceptional optoelectronic properties. This new class of semiconductor materials has proved