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at LPICM on new generation semiconductor, plasma and AI We are looking for a PhD student (fully funded for 3 years) to work on a new project dedicated to ultrawide bandgap semiconductors deposition using
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, and the relation with the other partners. Therefore, the candidate should have a strong background in the electrical characterization of capacitor structures, point defect identification, semiconductor
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information processing system in a standard telecommunication laser diode. Experiments on semiconductor laser dynamics, coding machine-learning concepts. Writing manuscripts. ERC CoG INSPIRE Where to apply Website https
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physicsEducation LevelPhD or equivalent Skills/Qualifications The candidate must have a solid knowledge of the physics of semiconductors and devices. Clean-room fabrication, electronics of measurement systems
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their decisions and businesses in their strategies. Do you want to know more about LIST? Check our website: https://www.list.lu/ How will you contribute? Join us for building the next generation of semiconductor
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Technol. 11, 2300460, 2023. [9] T. Huesgen, Printed circuit board embedded power semiconductors: A technology review, Power Electronic Devices and Components 3, 100017, 2022. [10] D. J. Kearney, S. Kicin, E
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conductive regions, • Investigating doping mechanisms and their stability, • Electrical and morphological characterization of transistors, • Evaluating device stability under real-world operating conditions
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universities and research centers, and 3 companies, from 6 EU countries. The mission of the FADOS network is to use the large expertise on all aspects of doping of organic semiconductors that is available in
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to propose a breakthrough bottom-up approach compared to the classical top-down semiconductor way, time and cost consuming. Biocompatible nanocrystals of GaN and In0.25Ga0.75N have been successfully
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Institut d'Electronique et de Télécommunications de Rennes | Rennes, Bretagne | France | 17 days ago
set of instructions for encoding data, making the device more vulnerable. These faults are induced by the (transient) conduction of a MOSFET transistor initially blocked by the generation of electron