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at LPICM on new generation semiconductor, plasma and AI We are looking for a PhD student (fully funded for 3 years) to work on a new project dedicated to ultrawide bandgap semiconductors deposition using
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conductive regions, • Investigating doping mechanisms and their stability, • Electrical and morphological characterization of transistors, • Evaluating device stability under real-world operating conditions
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universities and research centers, and 3 companies, from 6 EU countries. The mission of the FADOS network is to use the large expertise on all aspects of doping of organic semiconductors that is available in
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to propose a breakthrough bottom-up approach compared to the classical top-down semiconductor way, time and cost consuming. Biocompatible nanocrystals of GaN and In0.25Ga0.75N have been successfully
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authorized by the competent authority of the MESR. In recent years, halide perovskites have demonstrated exceptional optoelectronic properties. This new class of semiconductor materials has proved