410 engineering-computation "https:" "https:" "https:" "https:" "INESC TEC" positions at NIST
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are encouraged to submit research proposals on the following topics: DFT and MD for computational dielectric spectroscopy Properties of electrochemical double layer (effects on the local polarization, structure
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for achieving recovery-based objectives, (3) computing the collapse risk of new and existing buildings and infrastructure systems, (3) developing improved nonlinear modeling capabilities to evaluate the response
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attracted considerable attention for potential application in nanoscale devices, including beyond-CMOS electronics, quantum computers, chemical sensors, photodetectors, etc. Prospective advantages over
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understanding of materials. For communications technology, the lack of acoustic data limits the design of acoustic filter technology. For pharmaceuticals and chemical manfucaturers, there are important relaxation
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RAP opportunity at National Institute of Standards and Technology NIST Microwave Materials for High-Speed Microelectronics Location Communications Technology Laboratory, Radio Frequency
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RAP opportunity at National Institute of Standards and Technology NIST Enabling Advanced Functionalities in Photonics using Low-Dimensional Semiconductors Location Material Measurement
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RAP opportunity at National Institute of Standards and Technology NIST Augmented Intelligence for Semiconductor Manufacturing Location Engineering Laboratory, Intelligent Systems Division
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; Parallel and distributed computing; Software engineering; Standards; Eligibility citizenship Open to U.S. citizens level Open to Postdoctoral applicants Stipend Base Stipend Travel Allotment Supplementation
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energetics, thermodynamics, kinetics of protein-DNA interactions, and related phenomena, and connecting these measurements to organism fitness. Computation for engineering biology, such as RNA circuits, in
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to characterize 2D materials, semiconductor devices, and biological materials from DC to the THz regime. The measurements enable the engineering of dielectric, magnetic and electrical transport properties of thin