389 structural-engineering "https:" "https:" "https:" "https:" "https:" "VIETNAMESE GERMAN UNIVERSITY" positions at NIST
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NIST only participates in the February and August reviews. The modern transmission electron microscope (TEM) is capable of atomic-resolution structural and chemical imaging. However, such data
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with high-speed and energy-efficient InP and GaN chips. This research opportunity at NIST’s Communications Technology Laboratory is focused building the tools and techniques that are required to design
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RAP opportunity at National Institute of Standards and Technology NIST Modulating quantum structure of 1D materials by covalent surface chemistry Location Material Measurement Laboratory
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NIST only participates in the February and August reviews. Join a team of scientists and engineers who are investigating the reliability of the structural materials that are used for machinery
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of hormones in biological matrices. Hormones are essential for major developmental and reproductive processes. Because hormones are highly similar in structure and found at nanomolar concentrations
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RAP opportunity at National Institute of Standards and Technology NIST Integrating Data and Computational Tools for Advanced Materials Design Location Material Measurement Laboratory, Materials
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Riboswitch Folding: A High-Pressure Single-Molecule Kinetic Study”, J. Phys. Chem. B, (2022) https://doi-org.colorado.idm.oclc.org/10.1021/acs.jpcb.2c06579. H-L Sung and D. J. Nesbitt, “Synergism in
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RAP opportunity at National Institute of Standards and Technology NIST Advanced Imaging of Biomaterials and Smart Polymers Location Material Measurement Laboratory, Biosystems and Biomaterials
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out to discuss potential proposals. (1) https://www.biorxiv.org/content/10.1101/2025.02.18.638308v1.full (2) https://www.nature.com/articles/s41598-024-57981-4 Microbiology; Cell Count; Enumeration
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to characterize 2D materials, semiconductor devices, and biological materials from DC to the THz regime. The measurements enable the engineering of dielectric, magnetic and electrical transport properties of thin