Sort by
Refine Your Search
-
, plays an important role at NIST in the development and interpretation of new measurement techniques, as well as aiding the understanding of the behavior of new materials in existing measurements. In
-
. Opportunities exist for (1) the development of simple yet accurate modeling approaches that enable rapid collapse analysis of large structural systems, (2) comparison and quantification of the progressive
-
) to develop new imaging and metrological capabilities for studying nanoscale electronic properties. In particular, we are interested in combining time-resolved optical techniques with our microwave methods
-
Consortium led to the development of the first NIST RMs in this class, with widely-used benchmark germline variant calls for seven human cell lines [1]. Artificial intelligence and machine learning hold
-
the field of flexible electronics. Developing an effective flexible electronic structure has its own challenges from mechanical compliance of the substrate to device performance. There is a delicate balance
-
@nist.gov 301.975.4127 Description This research is centered on the development and application of analytical methods to the characterization of nanomaterials. Opportunities exist to study the composition
-
@nist.gov 301.975.2860 Description New developments in detector technology have made possible the acquisition of the full electron scattering distribution at each pixel in a scanning transmission electron
-
are seeking researchers to contribute to the development and application of advanced measurement and automation techniques for exploring processing-structure-property-performance (PSPP) relationships in
-
quality (p, ρ, T) measurements from 200 – 505 K, with pressures to 40 MPa. The speed of sound is a property that yields very powerful data for developing fluid equations of state (EOS), and we have two
-
electronics. New materials are continually being developed for electronic applications, and accurate measurements of the electromagnetic properties of these often complex new materials is critical both