44 engineering-computation-"https:"-"https:"-"https:"-"https:"-"https:" positions at Lancaster University
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Technology Enhanced Learning (TEL) to become part of our internationally leading TEL doctoral programme team for 12 months. The TEL doctoral programme is delivered by colleagues in the discipline of
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. The role will focus on delivering high-quality teaching across core computer science undergraduate modules including Human Computer Interaction (HCI). Background skills in Software Engineering and/or
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January 2026 Reference: 0926-25 We invite applications for a Research Software Engineer to join the Prob_AI Hub. This £8.5M programme is funded by EPSRC and brings together research groups from
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technology. The PhD position is available for admission in October 2026. The studentship is fully funded for UK/EU/Overseas students for 4 years. Applicants should have the equivalent of a first (1) or upper
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and Medicine, as well as colleagues in Chemistry, Physics, Engineering, Psychology and the Lancaster Environment Centre within the Faculty of Science and Technology. You should have an established (SL
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). We offer a range of degrees, including Computer Science, Software Engineering and joint degrees at undergraduate level, and MScs in Computer Science, Data Science, Cyber Security at postgraduate level
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Faculty of Science & Technology Location: Bailrigg, Lancaster, UK Salary: Senior Salary (Full time, fixed term) Closing Date: Wednesday 18 February 2026 Interview Date: Monday 23 March 2026
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Faculty of Science & Technology Location: Bailrigg, Lancaster, UK Salary: Senior Salary (Full time, indefinite with end date) Closing Date: Wednesday 18 February 2026 Interview Date: Monday 23
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committed to excellent research-led and problem focused student learning and offers a range of degrees, including Computer Science, Cyber Security, Software Engineering and Data Science at undergraduate level
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grant TWISST: Terahertz wave induced spin switching technology. TWISST aims to develop the scientific understanding needed to create a new generation of magnetic memory-devices characterised by very low