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PhD position on Vertical GaN MOS structures with semi-insulating channel for high-power switches

Institute of Electrical Engineering, Slovak Academy of Sciences | Slovakia | about 13 hours ago

for power electronics, RF amplifiers, and motor drives. By incorporating vertical structures, these devices achieve high current handling capabilities while maintaining efficient thermal management

PhD position on Growth and properties of III-N quantum structures for fast electronics

Institute of Electrical Engineering, Slovak Academy of Sciences | Slovakia | about 13 hours ago

of the work deals with the growth and investigation of epitaxial III-N quantum structures prepared by metal-organic chemical-vapor deposition (MOCVD). GaN, as a constituting member of III-N family, is a most